Manufacturing Options
- Isostatic pressing
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Dry pressing
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Hot pressing
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Slip casting
Advanced Finishing Services
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Precision grinding and lapping
- Engineering design and support
Silicon Carbide (SiC)
Silicon Carbide Overview
Silicon carbide (SiC) ceramics maintains its high mechanical strength in temperatures as high as 1,400C It has higher chemical corrosion resistance than other ceramics.
China Ceramic Manufacturer offers a complete family of fully dense silicon carbide ceramics materials.
Reaction Bonded Silicon Carbide
China Ceramic Manufacturer employs a reaction-bonding process to manufacture SiC that retains approximately 10% metallic silicon. Our bonded SiC can be formed by casting, dry pressing, or isostatic pressing.
Sintered Silicon Carbide
China Ceramic Manufacturer produces high-purity Silicon Carbide (SiC) using a direct sintering process. This process allows for low-cost forming methods such as casting, dry pressing, and isostatic pressing, while retaining high-purity levels.
Materials and Manufacturing Experts
Material Properties Chart
| Reaction Bonded Silicon Carbide | Sintered Silicon Carbide | ||
|---|---|---|---|
| Density g/cm3 | 3.10 | 3.15 | |
| Crystal Size Average Microns | 12 | 3-10 | |
| Water Absorption % | 0 | 0 | |
| Gas Permeability – | 0 | 0 | |
| Color – | Black | Black | |
| Flexural Strength (MOR) 20° C MPa (psi x 103) | 462 (67) | 480 (70) | |
| Elastic Modulus 20° C GPa (psi x 106) | 393 (57) | 410 (59) | |
| Poisson’s Ratio 20° C – | 0.20 | 0.21 | |
| Compressive Strength 20° C MPa (psi x 103) | 2700 (363) | 3500 (507) | |
| Hardness Rockwell R45N | – | – | |
| Tensile Strength 25° C MPa (psi x 103) | 307 (44.5) | ||
| Fracture Toughness K(I c) MPam1/2 | 4 | 4 | |
| Thermal Conductivity 20° C W/m K | 125.0 | 150.0 | |
| Coefficient of Thermal Expansion 25-1000° C 1X 10-6/°C | 4.3 | 4.4 | |
| Specific Heat 100° C J/kg*K | 800 | 800 | |
| Thermal Shock Resistance Δ Tc °C | 400 | 300 | |
| Dielectric Strength 6.35mm ac-kV/mm (ac V/mil) | – | – | |
| Dielectric Constant 1 MHz 25° C | – | – | |
| Dielectric Loss (tan delta) 1 MHz 25° C | – | – | |
| Volume Resistivity 25° C ohm-cm | < 10 3 | < 10 5 | |
| Volume Resistivity 500° C ohm-cm | < 10 3 | < 10 3 | |
| Volume Resistivity 1000° C ohm-cm | < 10 3 | < 10 2 |
Our products with Silicon Carbide
$ 45.00 – $ 560.00
$ 1.45 – $ 876.45